Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 degrees C

被引:26
作者
Maksimov, MV [1 ]
Gordeev, NY [1 ]
Zaitsev, SV [1 ]
Kopev, PS [1 ]
Kochnev, IV [1 ]
Ledentsov, NN [1 ]
Lunev, AV [1 ]
Ruvimov, SS [1 ]
Sakharov, AV [1 ]
Tsatsulnikov, AF [1 ]
Shernyakov, YM [1 ]
Alferov, ZI [1 ]
Bimberg, D [1 ]
机构
[1] TECH UNIV BERLING,D-10623 BERLIN,GERMANY
关键词
D O I
10.1134/1.1187093
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Gaseous phase epitaxy from metal organic compounds is used to obtain a low-temperature injection laser with an active region based on In0.5Ga0.5As/GaAs quantum dots. Optimizing the growth conditions and geometric parameters of the structure has made it possible to increase the range of ultrahigh thermal stability in the threshold current (the characteristic temperature is T-0 = 385 K) up to 50 degrees C. (C) 1997 American Institute of Physics.
引用
收藏
页码:124 / 126
页数:3
相关论文
共 6 条
  • [1] ALFEROV ZI, 1996, SEMICONDUCTORS+, V30, P196
  • [2] ALFEROV ZI, 1996, SEMICONDUCTORS+, V30, P200
  • [3] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT
    ARAKAWA, Y
    SAKAKI, H
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 939 - 941
  • [4] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS
    KIRSTAEDTER, N
    LEDENTSOV, NN
    GRUNDMANN, M
    BIMBERG, D
    USTINOV, VM
    RUVIMOV, SS
    MAXIMOV, MV
    KOPEV, PS
    ALFEROV, ZI
    RICHTER, U
    WERNER, P
    GOSELE, U
    HEYDENREICH, J
    [J]. ELECTRONICS LETTERS, 1994, 30 (17) : 1416 - 1417
  • [5] SPONTANEOUS ORDERING OF ARRAYS OF COHERENT STRAINED ISLANDS
    SHCHUKIN, VA
    LEDENTSOV, NN
    KOPEV, PS
    BIMBERG, D
    [J]. PHYSICAL REVIEW LETTERS, 1995, 75 (16) : 2968 - 2971
  • [6] USTINOV VM, 1995, P MAT RES SOC FALL M