High-resolution microencapsulated electrophoretic display (EPD) driven by poly-Si TFTs with four-level grayscale

被引：79

作者：

Inoue, S ^{[1
]}

Kawai, H ^{[1
]}

Kanbe, S ^{[1
]}

Saeki, T ^{[1
]}

Shimoda, T ^{[1
]}

机构：

[1] Seido Epson Corp, Technol Platform Res Ctr, Nagano 3990293, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 09期

关键词：

complex coacervation method; electronic paper; electrophoretic material; grayscale; high contrast ratio; integrated driver; low power consumption; microcapsule; mobile information media; particle; polycrystalline silicon thin film transistor (polysilicon TFT); quarter VGA; reflective display; wide viewing angle;

D O I：

10.1109/TED.2002.801432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-resolution active-matrix microencapsulated electrophoretic display (EPD) driven by polycrystalline-silicon thin-film transistors (poly-Si TFTs) with integrated drivers has been developed for the first feasibility study of electronic paper. The poly-Si TFTs were fabricated with a low temperature process below 425 degreesC. Microencapsulated electrophoretic material was coated on the TFT backplane, which was driven at 18 V. The resolution of the display is quarter VGA (video graphics array), and pixel pitch is 131 ppi (pixels per inch). As a result, this display offers a wide viewing angle, high contrast ratio and nonvolatilization of data. In addition, four-level grayscale images were also achieved by using an area ratio grayscale (ARG) driving method.

引用

页码：1532 / 1539

页数：8

共 26 条

[21] MULTILEVEL VOLTAGE SELECT (MLVS) - NOVEL TECHNIQUE TO X-Y ADDRESS AN ELECTROPHORETIC IMAGE DISPLAY [J].

QUON, WS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) :1121-1123

[22]

SHIFFMAN RR, 1984, P SID, V25, P105

[23]

Shimoda T., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P289, DOI 10.1109/IEDM.1999.824153

[24]

SINGER B, 1977, P SID, V18, P255

[25]

Utsunomiya S., 2000, SID, V2000, P916

[26]

UTSUNOMIYA S, 1908, IDW, P339

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