A study of charge collection processes on polycrystalline diamond detectors

被引：9

作者：

Mersi, S ^{[1
]}

Borchi, E

Bruzzi, M

D'Alessandro, R

Lagomarsino, S

Sciortino, S

机构：

[1] Ist Nazl Fis Nucl, Sez Firenze, I-50019 Florence, Italy

[2] Univ Florence, Dipartimento Energet, I-50139 Florence, Italy

[3] Univ Florence, Dipartimento Fis, I-50139 Florence, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2004年 / 530卷 / 1-2期

关键词：

charge collection; CVD diamond; defect; priming; pumping effect;

D O I：

10.1016/j.nima.2004.05.063

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We performed a study of charge collection distance (CCD) on medium to high-quality prototypes of diamond sensors prepared by Chemical Vapor Deposition (CVD). We studied the Charge Collection Efficiency in these materials supposing that it is limited by the presence of a recombination level and a distribution of trap levels centered at 1.7 eV from the band-edge. We also supposed that the exposition to ionizing radiation can make the trap levels ineffective (pumping effect). We have shown that these assumptions are valid by correlating the CCD to the pumping efficiency. Moreover, we have shown that the pumping efficiency is bias-dependent. We have explained our experimental results assuming that trapped carriers generate an electric field inside the diamond bulk. (C) 2004 Published by Elsevier B.V.

引用

页码：146 / 151

页数：6

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