NiZn ferrite thin films prepared by facing target sputtering

被引:26
作者
Qian, ZH [1 ]
Wang, G [1 ]
Sivertsen, JM [1 ]
Judy, JH [1 ]
机构
[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
关键词
D O I
10.1109/20.619559
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
NiZn ferrite thin Rims with the spinel structure have been deposited successfully on glass substrates a:, a relatively low temperature by means of the Facing Target Sputtering(PTS) technique, In addition to substrate temperature, PO2/P (O-2 partial pressure over fetal sputtering pressure) ratio was found to be another main factor to control in-plane coercivity He and saturation moment density Ms of NiZn ferrite thin films, The increase of Ms is attributed to the increase of the substrate temperature or the decrease of PO2/P ratio; the decrease of Hs: is associated with the increase of both substrate temperature ansi PO2/P ratio, Il's believed that the PO2/P ratio plays a critical role in the formation of NiZn ferrite film, which determines the magnetic properties of the film, With the increase of PO2/P ratio, NiZn thin film changes from a strong (111), (311) texture-dominated polycrystal structure to an amorphous structure and grain size become smaller, In this study, sputtering conditions of NiZn ferrite films were optimized to achieve a low in-plane coercivity He and a relatively high saturation moment density Ms.
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页码:3748 / 3750
页数:3
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