Single crystal growth, and magnetic and electronic properties of EuGa4

被引：36

作者：

Bobev, S ^{[1
]}

Bauer, ED ^{[1
]}

Thompson, JD ^{[1
]}

Sarrao, JL ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 277卷 / 1-2期

关键词：

rare-earth intermetallics; crystal growth; flux synthesis; BaAl4-structure type; Eu-magnet;

D O I：

10.1016/j.jmmm.2003.11.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Large single crystals of the title compound were synthesized from the pure elements using an excess of molten Ga as a solvent. EuGa4 crystallizes in the body-centered tetragonal space group I4/mmm (BaAl4-structure type) with unit cell parameters a = 4.407(1) Angstrom and c = 10.635(3),Angstrom, and c/a ratio of 2.413. Temperature (2-350 K) dependence of the DC magnetization, along with the temperature dependence of the electrical resistivity and electronic heat capacity, is presented. According to these measurements, EuGa4 orders antiferromagnetically near T-N = 15 K. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：236 / 243

页数：8

共 21 条

[11] MAKING AND BREAKING BONDS IN THE SOLID-STATE - THE THCR2SI2 STRUCTURE [J].