Epitaxial growth of non-c-oriented SrBi2Nb2O9 on (111) SrTiO3

被引：79

作者：

Lettieri, J ^{[1
]}

Zurbuchen, MA

Jia, Y

Schlom, DG

Streiffer, SK

Hawley, ME

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16803 USA

[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[3] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 20期

关键词：

D O I：

10.1063/1.126522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial SrBi2Nb2O9 thin films have been grown with a (103) orientation on (111) SrTiO3 substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO3 electrodes enabled the electrical properties of these (103)-oriented SrBi2Nb2O9 films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 mu C/cm(2), and the dielectric loss was 2.5% for a 0.5-mu m-thick film. (C) 2000 American Institute of Physics. [S0003-6951(00)01720-4].

引用

页码：2937 / 2939

页数：3

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