A combined-nanoimprint-and-photolithography patterning technique

被引:82
作者
Cheng, X [1 ]
Guo, LJ [1 ]
机构
[1] Univ Michigan, Solid State Elect Lab, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
关键词
nanoimprint; photolithography; near-field effect; nanopatterning;
D O I
10.1016/j.mee.2004.01.041
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a new lithography technique that combines the advantages of nanoimprint lithography (NIL) and photolithography. In this combined-nanoimprint-and-photolithography (CNP) technique, we introduce a hybrid mask-mold made from UV transparent material and with a light-blocking metal layer placed on top of the mold protrusions. We demonstrate that the CNP method using such a hybrid mold can achieve resist patterns without residual layer, and the resist patterns can have higher aspect ratio than the feature on the mold. In addition, the photoresist used in the CNP technique can provide higher etching durability compared with thermal plastic polymers that are commonly used in NIL. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:277 / 282
页数:6
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