Characterization of the manufacturability of ultrathin resist

被引：19

作者：

Nguyen, KB ^{[1
]}

Lyons, C ^{[1
]}

Schefske, J ^{[1
]}

Pike, C ^{[1
]}

Phan, K ^{[1
]}

King, P ^{[1
]}

Levinson, H ^{[1
]}

Bell, S ^{[1
]}

Okoroanyanwu, U ^{[1
]}

机构：

[1] Adv Micro Devices Inc, Sunnyvale, CA 94088 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期

关键词：

D O I：

10.1116/1.590950

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study was conducted to explore the manufacturability of ultrathin resist by focusing on two key issues, defects and etch resistance. Defects in ultrathin resist were characterized by optical inspection and scanning electron microscopy reviews. A number of representative defect types in the ultrathin resist/hardmask process were identified. With process optimization, defect density in ultrathin resist was reduced to levels that are comparable to that of a baseline 0.5 mu m thick resist process on nontopographic wafers. Etch resistance sufficient for patterning metal-oxide-semiconductor transistor gate film stacks was demonstrated for a 100-150 nm thick resist layer. (C) 1999 American Vacuum Society. [S0734-211X(99)14306-3].

引用

页码：3039 / 3042

页数：4

共 10 条

[1] High resolution structure imaging of octahedral void defects in as-grown Czochralski silicon [J].

Bender, H ;

Vanhellemont, J ;

Schmolke, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB) :L1217-L1220

[2] Critical issues in 157 nm lithography [J].

Bloomstein, TM ;

Rothschild, M ;

Kunz, RR ;

Hardy, DE ;

Goodman, RB ;

Palmacci, ST .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3154-3157

[3] CHARACTERIZATION OF AZ PN114 RESIST FOR SOFT-X-RAY PROJECTION LITHOGRAPHY [J].

EARLY, K ;

TENNANT, DM ;

JEON, DY ;

MULGREW, PP ;

MACDOWELL, AA ;

WOOD, OR ;

KUBIAK, GD ;

TICHENOR, DA .

APPLIED OPTICS, 1993, 32 (34) :7044-7049

[4] Characterization of crystal quality by crystal originated particle delineation and the impact on the silicon wafer surface [J].

Graf, D ;

Suhren, M ;

Lambert, U ;

Schmolke, R ;

Ehlert, A ;

von Ammon, W ;

Wagner, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (01) :275-284

[5] X-RAY INTERACTIONS - PHOTOABSORPTION, SCATTERING, TRANSMISSION, AND REFLECTION AT E=50-30,000 EV, Z=1-92 [J].

HENKE, BL ;

GULLIKSON, EM ;

DAVIS, JC .

ATOMIC DATA AND NUCLEAR DATA TABLES, 1993, 54 (02) :181-342

[6] ULTRATHIN POLYMER-FILMS FOR MICROLITHOGRAPHY [J].

KUAN, SWJ ;

FRANK, CW ;

FU, CC ;

ALLEE, DR ;

MACCAGNO, P ;

PEASE, RFW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2274-2279

[7]

KUNZ RR, 1991, POLYM ENG SCI, V32, P1595

[8] DEFECT STUDIES ON SINGLE AND BILAYER RESIST SYSTEMS [J].

MULLER, KP ;

SACHDEV, HS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06) :2560-2564

[9]

RAO V, IN PRESS P SPIE

[10] DRYING OF SOLIDS WETTED BY THIN LIQUID-FILMS [J].

WYART, FB ;

DAILLANT, J .

CANADIAN JOURNAL OF PHYSICS, 1990, 68 (09) :1084-1088

← 1 →