Ab initio calculations for a hypothetical material:: Silicon nanotubes

被引:231
作者
Fagan, SB [1 ]
Baierle, RJ
Mota, R
da Silva, AJR
Fazzio, A
机构
[1] Univ Fed Santa Maria, Dept Fis, BR-97105900 Santa Maria, RS, Brazil
[2] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 15期
关键词
D O I
10.1103/PhysRevB.61.9994
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electronic and structural properties of a hypothetical material, silicon nanotubes, are examined through first-principles calculations based on density functional theory. Even considering that Si nanotubes have never been observed, this paper attempts to establish the theoretical similarities between Si and C, like band structures and density of states, as well as the main differences, especially associated with cohesive energies. The band-structure calculations for silicon nanotubes show that, similar to carbon structures, depending on their chiralities, they may present metallic (armchair) or semiconductor (zigzag and mixed) behaviors.
引用
收藏
页码:9994 / 9996
页数:3
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