Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering

被引：66

作者：

Kim, Il-Doo

Lim, Mi-Hwa

Kang, KyongTae

Kim, Ho-Gi

Choi, Si-Young

机构：

[1] Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[3] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 02期

关键词：

D O I：

10.1063/1.2220485

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report on dielectric and leakage current characteristics of room temperature deposited Bi1.5Zn1.0Nb1.5O7 (BZN) films on, the basis of crystallographic structure and suitability of BZN gate insulators as key building blocks in the fabrication of low voltage operating ZnO based thin-film transistors (TFTs). The BZN films exhibited a high dielectric constant (similar to 51) and good leakage current characteristics (similar to 10(-7) A/cm(2)) at an applied voltage of 5 V. All room temperature processed ZnO based TFTs using BZN gate insulator exhibited field effect mobility of 1.13 cm(2)/Vs and low voltage device performance less than 4 V. (c) 2006 American Institute of Physics.

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页数：3

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