One volt organic transistor

被引：207

作者：

Majewski, LA ^{[1
]}

Schroeder, R ^{[1
]}

Grell, M ^{[1
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 02期

关键词：

D O I：

10.1002/adma.200400809

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Solution-based anodization of titanium can deliver high-capacitance, pinhole-free TiO2 films where the film thickness is controlled by the anodization voltage. In conjunction with the organic semiconductor pentacene, such films can be used to manufacture transistors that operate at less than 1 V (see Figure). Low-cost, disposable devices with low available voltages could take advantage of these flexible organic transistors.

引用

页码：192 / +

页数：6

共 24 条

[1] All-organic thin-film transistors patterned by means of selective electropolymerization [J].

Becker, E ;

Parashkov, R ;

Ginev, G ;

Schneider, D ;

Hartmann, S ;

Brunetti, F ;

Dobbertin, T ;

Metzdorf, D ;

Riedl, T ;

Johannes, HH ;

Kowalsky, W .

APPLIED PHYSICS LETTERS, 2003, 83 (19) :4044-4046

[2] Titanium dioxide (TiO2)-based gate insulators [J].

Campbell, SA ;

Kim, HS ;

Gilmer, DC ;

He, B ;

Ma, T ;

Gladfelter, WL .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1999, 43 (03) :383-392

[3] Self-organized organic thin-film transistors on plastic [J].

Choi, HY ;

Kim, SH ;

Jang, J .

ADVANCED MATERIALS, 2004, 16 (08) :732-+

[4] Threshold voltage and subthreshold slope of multiple-gate SOI MOSFETs [J].

Colinge, JP ;

Park, JW ;

Xiong, W .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (08) :515-517

[5] Improvement of characteristics of organic thin-film transistor with anodized gate insulator by an electrolyte solution and low-voltage driving of liquid crystal by organic thin-film transistors [J].

Fujisaki, Y ;

Inoue, Y ;

Kurita, T ;

Tokito, S ;

Fujikake, H ;

Kikuchi, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (01) :372-377

[6] Breakdown of ultrathin anodic valve metal oxide films in metal-insulator-metal-contacts compared with metal-insulator-electrolyte contacts [J].

Hassel, AW ;

Diesing, D .

THIN SOLID FILMS, 2002, 414 (02) :296-303

[7] Organic thin-film transistors on a plastic substrate with anodically oxidized high-dielectric-constant insulators [J].

Iino, Y ;

Inoue, Y ;

Fujisaki, Y ;

Fujikake, H ;

Sato, H ;

Kawakita, M ;

Tokito, S ;

Kikuchi, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (01) :299-304

[8] INTERMEDIATE AMORPHOUS LAYER FORMATION MECHANISM AT THE INTERFACE OF EPITAXIAL CEO2 LAYERS AND SI SUBSTRATES [J].

INOUE, T ;

OHSUNA, T ;

OBARA, Y ;

YAMAMOTO, Y ;

SATOH, M ;

SAKURAI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (04) :1765-1767

[9] Leakage current and electrical breakdown in metal-organic chemical vapor deposited TiO2 dielectrics on silicon substrates [J].

Kim, HS ;

Gilmer, DC ;

Campbell, SA ;

Polla, DL .

APPLIED PHYSICS LETTERS, 1996, 69 (25) :3860-3862

[10] Alternative dielectrics to silicon dioxide for memory and logic devices [J].

Kingon, AI ;

Maria, JP ;

Streiffer, SK .

NATURE, 2000, 406 (6799) :1032-1038

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