Ambipolar pentacene field-effect transistors with calcium source-drain electrodes

被引:214
作者
Yasuda, T [1 ]
Goto, T [1 ]
Fujita, K [1 ]
Tsutsui, T [1 ]
机构
[1] Kyushu Univ, Grad Sch Engn Sci, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan
关键词
D O I
10.1063/1.1794375
中图分类号
O59 [应用物理学];
学科分类号
摘要
Field-effect transistors consisted of vacuum-sublimed polycrystalline pentacene films and calcium source-drain electrodes were prepared and device characteristics were evaluated in an oxygen-free condition. The field-effect transistor showed typical ambipolar characteristics and field-effect hole mobility of 4.5x10(-4) cm(2)/Vs and field-effect electron mobility of 2.7x10(-5) cm(2)/Vs were estimated from saturation currents. Appearance of an electron enhancement mode in pentacene field-effect transistors was ascribed to the lowering of barrier for electron injection at source-drain electrodes. Effective elimination of electron traps using an oxygen-free condition was found to be another requirement for the observation of ambipolar behavior in pentacene. (C) 2004 American Institute of Physics.
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收藏
页码:2098 / 2100
页数:3
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