A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment.

被引：121

作者：

Monsieur, F ^{[1
]}

Vincent, E ^{[1
]}

Roy, D ^{[1
]}

Bruyere, S ^{[1
]}

Vildeuil, JC ^{[1
]}

Pananakakis, G ^{[1
]}

Ghibaudo, G ^{[1
]}

机构：

[1] STMicroelectronics, Cent R&D Labs, F-38926 Crolles, France

来源：

40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2002年

关键词：

reliability; ultra-thin oxides; conduction path; wear-out; runaway; progressiveness; delay; detection criterion; extended; lifetime;

D O I：

10.1109/RELPHY.2002.996609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper provides a close investigation of the gate oxide failure for thickness below 24Angstrom. At first, the failure detection is discussed showing that its manifestation is not catastrophic anymore. Then, the wear-out beginning at the failure occurrence is studied. It highlights the path conduction aging whose progressiveness is found to be mainly gate voltage driven. At last, progressiveness dynamics is investigated and a methodology is developed to rigorously relax the reliability criterion following applications.

引用

页码：45 / 54

页数：10

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