CURRENT FLUCTUATIONS AND SILICON-OXIDE WEAR-OUT IN METAL-OXIDE-SEMICONDUCTOR TUNNEL-DIODES

被引：64

作者：

FARMER, KR ^{[1
]}

SALETTI, R ^{[1
]}

BUHRMAN, RA ^{[1
]}

机构：

[1] CNR,CTR STUDI METODI & DISPOSIT RADIOTRANSMISS,I-56100 PISA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 20期

关键词：

D O I：

10.1063/1.99029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1749 / 1751

页数：3

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