THE RELATION BETWEEN POSITIVE CHARGE AND BREAKDOWN IN METAL-OXIDE-SILICON STRUCTURES

被引：55

作者：

WEINBERG, ZA

NGUYEN, TN

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.338043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1947 / 1956

页数：10

共 33 条

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[10] COMPARISON OF HIGH-FIELD STRESS EFFECTS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES WITH ALUMINUM AND POLYCRYSTALLINE SILICON GATES USING INTERNAL PHOTOEMISSION MEASUREMENTS [J].

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