Low-temperature dielectric relaxation in the pyrochlore (Bi3/4Zn1/4)2(Zn1/4Ta3/4)2O7 compound

被引：39

作者：

Ang, C ^{[1
]}

Yu, Z ^{[1
]}

Youn, HJ ^{[1
]}

Randall, CA ^{[1
]}

Bhalla, AS ^{[1
]}

Cross, LE ^{[1
]}

Nino, J ^{[1
]}

Lanagan, M ^{[1
]}

机构：

[1] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 25期

关键词：

D O I：

10.1063/1.1486045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dielectric behavior of the pyrochlore (Bi3/4Zn1/4)(2)(Zn1/4Ta3/4)(2)O-7 compound has been studied. A low-temperature dielectric relaxation was observed in a low-permittivity matrix with epsilon=similar to60. The dielectric relaxation process follows a modified Debye model in the vicinity of the relaxation peak, and the relaxation rate follows the Arrhenius law in the wide frequency range 10(2) to similar to10(10) Hz. The temperature intensity of dielectric peaks are independent of dc bias (less than or equal to60 kV/cm). The dielectric relaxation is tentatively attributed to the hopping of Zn/Bi ions at A sites with more than one equivalent potential minima, and the reorientation of the dipoles probably formed through interactions with the "seventh oxygen" and the Bi/Zn A-site ions in the pyrochlore (Bi3/4Zn1/4)(2)(Zn1/4Ta3/4)(2)O-7 compound. (C) 2002 American Institute of Physics.

引用

页码：4807 / 4809

页数：3

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