Epitaxial Growth and Ordering of GeTe Nanowires on Microcrystals Determined by Surface Energy Minimization

被引：23

作者：

Chung, Hee-Suk ^{[1
,2
]}

Jung, Yeonwoong ^{[1
]}

Kim, Seul Cham ^{[2
]}

Kim, Do Hyun ^{[2
]}

Oh, Kyu Hwan ^{[2
]}

Agarwal, Ritesh ^{[1
]}

机构：

[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

来源：

NANO LETTERS | 2009年 / 9卷 / 06期

关键词：

GERMANIUM TELLURIDE NANOWIRES; DIAMETER-CONTROLLED SYNTHESIS; ZNO NANOWIRES; ARRAYS; MEMORY; NETWORKS; SI; ALIGNMENT; NANORODS; BEHAVIOR;

D O I：

10.1021/nl9009765

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report self-assembly of highly aligned GeTe nanowires epitaxially grown on octahedral GeTe microcrystals in two well-defined directions by using one-step vapor transport process. The epitaxial relationship of nanowires with underlying microcrystals along with the growth orientations of nanowires were investigated in detail by electron microscopy combined with atomic unit cell models. We demonstrate that maximizing atomic planar density to minimize energy of the exposed surfaces is the determining factor that governs the unique growth characteristics of micro/nanostructures that evolve from three-dimensional octahedral microcrystals to tetrahedral bases to finally one-dimensional nanowires. The crystallographic understanding of structuring of crystalline nanomaterials obtained from this study will be critical to understand, predict, and control the growth orientation of nanostructures in three-dimensions.

引用

页码：2395 / 2401

页数：7

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