Cluster formation and growth in Si ion implanted c-Si

被引：8

作者：

Libertino, S

Coffa, S

Spinella, C

Benton, JL

Arcifa, D

机构：

[1] CNR, IMETEM, I-95121 Catania, Italy

[2] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 71卷

关键词：

clustering; deep levels; photoluminescence; annealing; defects;

D O I：

10.1016/S0921-5107(99)00363-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Formation condition and annealing kinetics of self-interstitial (I) clusters in. ion implanted Si have been investigated. Deep level transient spectroscopy (DLTS) and photoluminescence (PL) measurements were performed on both p-type Czochralski Si samples implanted with Si ions at energies ranging from 40 KeV to 1.2 MeV. They reveal that I-clusters form for implantation fluences above 10(12) cm(-2) and annealing temperatures higher than 550 degrees C. Analysis of the annealing kinetics at temperatures in the range 550-700 degrees C reveals that I-clusters dissociate with an energy depending on the implantation dose. The characteristic dissociation energy is similar to 2.3 eV for 1 x 10(12) cm(-2) implants, and this value increased towards the typical {311} extended defects dissociation energy value (similar to 3.8 eV) by increasing the implantation fluence. Finally, the transition from I-clusters to (311) defects was followed using PL and DLTS in combination with transmission electron microscopy analysis. A PL line at 1375 nm has been associated to (311) extended defects and a threshold dose and annealing temperature for the extended defects formation identified. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：137 / 142

页数：6

共 16 条

[1] ELECTRICALLY ACTIVE DEFECTS IN DEEP PREAMORPHIZED SINGLE-CRYSTAL SILICON LAYERS [J].