Preparation of BaTiO3 thin films by mist plasma evaporation on MgO buffer layer

被引：14

作者：

Huang, H ^{[1
]}

Yao, X ^{[1
]}

机构：

[1] Xian Jiaotong Univ, Elect Mat Res Lab, Key Lab Minist Educ, Xian 710049, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2004年 / 30卷 / 07期

关键词：

dielectric properties; BaTiO3; mist plasma evaporation;

D O I：

10.1016/j.ceramint.2003.12.092

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 [材料科学与工程]; 080502 [材料学];

摘要：

Mist plasma evaporation (MPE) was developed to deposit BaTiO3 (BTO) thin films on silicon substrate with MgO buffer layer using metal nitrate aqueous solution as precursor. In MPE, the precursor was ultrasonically atomized into fine droplets, and was transported to radio frequency inductively coupled plasma generated at atmospheric pressure to deposit thin film on substrate. The structure, morphology, and electrical properties of the BaTiO3 films were studied. The BaTiO3 thin films were perovskite, and showed (111)-preferential orientation on MgO(111)/Si(111) substrate. The grain size of the film decreased with the decreasing of substrate temperature. The dielectric constant of the BaTiO3 film at 10 kHz was 566. (C) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：1535 / 1538

页数：4

共 14 条

[1]

Charge transport and trapping in BaTiO3 thin films flash evaporated on Si and SiO2/Si [J].

Avila, RE ;

Caballero, JV ;

Fuenzalida, VM ;

Eisele, I .

THIN SOLID FILMS, 1999, 348 (1-2) :44-48

[2]

BASANTAKUMAR SH, 1998, THIN SOLID FILMS, V330, P178

[3]

Techniques for top-seeded solution growth of BaTiO3 [J].

Garrett, MH ;

Mnushkina, I .

JOURNAL OF CRYSTAL GROWTH, 1996, 166 (1-4) :550-557

[4]

Hidenobu N., 1991, J APPL PHYS 1, V30, P2200

[5]

On the distribution modulo 1 of q-additive functions [J].

Kim, DH .

ACTA MATHEMATICA HUNGARICA, 2001, 90 (1-2) :75-83

[6]

Tailoring of the preferred orientation and microstructure in the deposition of BaTiO3 thin films using pulsed laser deposition [J].

Kim, DY ;

Lee, SG ;

Park, YK ;

Park, SJ .

MATERIALS LETTERS, 1999, 40 (03) :146-150

[7]

ELECTRICAL AND MICROSTRUCTURAL PROPERTIES OF BATIO3 THIN-FILMS ON P-SI SUBSTRATES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

KIM, TW ;

JUNG, M ;

YOON, YS ;

KANG, WN ;

SHIN, HS ;

YOM, SS ;

LEE, JY .

SOLID STATE COMMUNICATIONS, 1993, 86 (09) :565-568

[8]

Fabrication of barium titanate thin films with a high dielectric constant by a sol-gel technique [J].

Kumazawa, H ;

Masuda, K .

THIN SOLID FILMS, 1999, 353 (1-2) :144-148

[9]

The properties of barium titanate RF sputtered in argon [J].

Pencheva, T ;

Nenkov, M .

VACUUM, 1997, 48 (01) :43-48

[10]

Crystal structure and ferroelectricity of nanocrystalline barium titanate thin films [J].

Wang, MC ;

Hsiao, FY ;

Hsi, CS ;

Wu, NC .

JOURNAL OF CRYSTAL GROWTH, 2002, 246 (1-2) :78-84

← 1 2 →