ELECTRICAL AND MICROSTRUCTURAL PROPERTIES OF BATIO3 THIN-FILMS ON P-SI SUBSTRATES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引:13
作者
KIM, TW
JUNG, M
YOON, YS
KANG, WN
SHIN, HS
YOM, SS
LEE, JY
机构
[1] KOREA INST SCI & TECHNOL,APPL PHYS LAB,SEOUL,SOUTH KOREA
[2] KOREA ADV INST SCI & TECHNOL,DEPT ELECTR MAT ENGN,DAEJON 305701,SOUTH KOREA
关键词
D O I
10.1016/0038-1098(93)90140-I
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Metalorganic chemical vapor deposition of BaTiO3 using Ba(tmhd)2, Ti(OC3H7)4, and N2O via thermal pyrolysis was performed in order to produce BaTiO3 insulator gates with a dielectric constant of high magnitude. Transmission electron microscopy results showed that the BaTiO3 films had a polycrystalline. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a BaTiO3 insulator gate. The dielectric constant determined from the capacitance-voltage measurements was as large as 1157. These results indicate that the BaTiO3 layer may be used for high-density dynamic-memory applications.
引用
收藏
页码:565 / 568
页数:4
相关论文
共 19 条
  • [1] EPITAXIAL-GROWTH OF BATIO3 THIN-FILMS BY PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION
    CHERN, CS
    ZHAO, J
    LUO, L
    LU, P
    LI, YQ
    NORRIS, P
    KEAR, B
    COSANDEY, F
    MAGGIORE, CJ
    GALLOIS, B
    WILKENS, BJ
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (09) : 1144 - 1146
  • [2] EPITAXIAL-GROWTH OF THIN-FILMS OF BATIO3 USING EXCIMER LASER ABLATION
    DAVIS, GM
    GOWER, MC
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (02) : 112 - 114
  • [3] FRITZSCHE D, 1981, ELECTRON LETT, V14, P51
  • [4] FERROELECTRIC THIN-FILMS FOR ELECTRONIC APPLICATIONS
    HAERTLING, GH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 414 - 420
  • [5] EPITAXIAL AL2O3 FILMS ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
    ISHIDA, M
    KATAKABE, I
    NAKAMURA, T
    OHTAKE, N
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (16) : 1326 - 1328
  • [6] KIM TW, 1992, KOREAN APPL PHYS, V5, P119
  • [7] METAL-OXIDE-SEMICONDUCTOR CHARACTERISTICS OF CHEMICAL VAPOR-DEPOSITED TA2O5 FILMS
    LO, GQ
    KWONG, DL
    LEE, S
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (26) : 3286 - 3288
  • [8] MOLECULAR-BEAM EPITAXY GROWTH OF EPITAXIAL BARIUM SILICIDE, BARIUM OXIDE, AND BARIUM-TITANATE ON SILICON
    MCKEE, RA
    WALKER, FJ
    CONNER, JR
    SPECHT, ED
    ZELMON, DE
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (07) : 782 - 784
  • [9] INVERSION-LAYERS ON INP
    MEINERS, LG
    LILE, DL
    COLLINS, DA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1458 - 1461
  • [10] ELECTRICAL-PROPERTIES OF SIO2 AND SI3N4 DIELECTRIC LAYERS ON INP
    MEINERS, LG
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 373 - 379