Phase separation and ordering in group-III nitride alloys

被引：10

作者：

Teles, LK ^{[1
]}

Marques, M ^{[1
]}

Scolfaro, LMR ^{[1
]}

Leite, JR ^{[1
]}

Ferreira, LG ^{[1
]}

机构：

[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, SP, Brazil

来源：

BRAZILIAN JOURNAL OF PHYSICS | 2004年 / 34卷 / 2B期

关键词：

D O I：

10.1590/S0103-97332004000400014

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic, structural, and thermodynamic properties of cubic (zinc blende) group-III nitride ternary InxGa1-xN and quaternary AlxInyGa1-x-yN alloys are investigated by combining first-principles total energy calculations and cluster expansion methods. External biaxial strain on the alloys are taken into account in the calculations. While alloy fluctuations and strain effects play a minor role in the physical properties of AlGaN, due to the small lattice-mismatch, in the InGaN alloys we found a remarkable influence of strain on the phase separation. The effect of biaxial strain on the formation of ordered phases has been also investigated, and the results are used to clarify the origin of the light emission process in InxGa1-xN based optoelectronic devices. The dependence of the lattice constant and energy bandgap in quaternary AlxInyGa1-x-yN alloys was obtained as function of the compositions x and y.

引用

页码：593 / 597

页数：5

共 32 条

[1] Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells [J].

Adivarahan, V ;

Chitnis, A ;

Zhang, JP ;

Shatalov, M ;

Yang, JW ;

Simin, G ;

Khan, MA ;

Gaska, R ;

Shur, MS .

APPLIED PHYSICS LETTERS, 2001, 79 (25) :4240-4242

[2] High optical quality AlInGaN by metalorganic chemical vapor deposition [J].

Aumer, ME ;

LeBoeuf, SF ;

McIntosh, FG ;

Bedair, SM .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3315-3317

[3] Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition [J].

Behbehani, MK ;

Piner, EL ;

Liu, SX ;

El-Masry, NA ;

Bedair, SM .

APPLIED PHYSICS LETTERS, 1999, 75 (15) :2202-2204

[4] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[5]

Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO

[6]

2-O

[7] STABILITY, ELECTRONIC-STRUCTURE, AND PHASE-DIAGRAMS OF NOVEL INTER-SEMICONDUCTOR COMPOUNDS [J].

FERREIRA, LG ;

WEI, SH ;

ZUNGER, A .

INTERNATIONAL JOURNAL OF SUPERCOMPUTER APPLICATIONS AND HIGH PERFORMANCE COMPUTING, 1991, 5 (01) :34-56

[8] Marked enhancement of 320-360 nm ultraviolet emission in quaternary InxAlyGa1-x-yN with In-segregation effect [J].

Hirayama, H ;

Kinoshita, A ;

Yamabi, T ;

Enomoto, Y ;

Hirata, A ;

Araki, T ;

Nanishi, Y ;

Aoyagi, Y .

APPLIED PHYSICS LETTERS, 2002, 80 (02) :207-209

[9] Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures [J].

Husberg, O ;

Khartchenko, A ;

As, DJ ;

Vogelsang, H ;

Frey, T ;

Schikora, D ;

Lischka, K ;

Noriega, OC ;

Tabata, A ;

Leite, JR .

APPLIED PHYSICS LETTERS, 2001, 79 (09) :1243-1245

[10] MICROWAVE PERFORMANCE OF A 0.25 MU-M GATE ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR [J].

KHAN, MA ;

KUZNIA, JN ;

OLSON, DT ;

SCHAFF, WJ ;

BURM, JW ;

SHUR, MS .

APPLIED PHYSICS LETTERS, 1994, 65 (09) :1121-1123

← 1 2 3 4 →