Improving the stability of organic light-emitting devices by using a thin Mg anode buffer layer

被引:20
作者
Aziz, Hany
Luo, Yichun
Xu, Gu
Popovic, Zoran D.
机构
[1] Xerox Res Ctr Canada Ltd, Mississauga, ON L5K 2L1, Canada
[2] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1063/1.2345242
中图分类号
O59 [应用物理学];
学科分类号
摘要
Introducing a thin Mg layer at the hole injection contact of organic light-emitting devices remarkably improves their operational stability. Devices in which a similar to 2.5 nm thick Mg layer is inserted between the indium tin oxide anode and a tetrafluoro-tetracyanoquinodimethane-doped hole transport material layer exhibit a significantly longer lifetime compared to similar devices without the Mg layer. After 600 h of operation at a current density of 62.5 mA/cm(2) with a 50% duty cycle, the luminance of devices containing the Mg layer decreases by only similar to 10% of the initial value. The stability enhancement resulting from using the Mg layer is attributed to improved balance in charge injection at the anode and cathode contacts. (c) 2006 American Institute of Physics.
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页数:3
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共 24 条
[21]   Driving duty ratio dependence of lifetime of tris(8-hydroxy-quinolinate)aluminum-based organic light-emitting diodes [J].
Tsujioka, T ;
Fujii, H ;
Hamada, Y ;
Takahashi, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (4A) :2523-2526
[22]   Organic electroluminescent devices with improved stability [J].
VanSlyke, SA ;
Chen, CH ;
Tang, CW .
APPLIED PHYSICS LETTERS, 1996, 69 (15) :2160-2162
[23]   Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices [J].
Wu, CC ;
Wu, CI ;
Sturm, JC ;
Kahn, A .
APPLIED PHYSICS LETTERS, 1997, 70 (11) :1348-1350
[24]   Very-low-operating-voltage organic light-emitting diodes using a p-doped amorphous hole injection layer [J].
Zhou, X ;
Pfeiffer, M ;
Blochwitz, J ;
Werner, A ;
Nollau, A ;
Fritz, T ;
Leo, K .
APPLIED PHYSICS LETTERS, 2001, 78 (04) :410-412