Templated growth of cadmium zinc telluride (CZT) nanowires using pulsed-potentials in hot non-aqueous solution

被引:36
作者
Gandhi, T. [1 ]
Raja, K. S. [1 ]
Misra, M. [1 ]
机构
[1] Univ Nevada, Reno, NV 89557 USA
关键词
nanowires; p-type; CZT; cyclic voltammogram; XRD;
D O I
10.1016/j.electacta.2006.03.043
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A single step non-aqueous electrodeposition of cadmium zinc telluride (CZT) nanowires on nanoporous TiO2 substrate was investigated under pulsed-potential conditions. Propylene carbonate was used as the non-aqueous medium. Cyclic voltammogram studies were carried out to understand the growth mechanism of CZT. EDAX and XRD measurements indicated formation of a compound semiconductor with a stoichiometry of Cd1-xZnxTe, where x varied between 0.04 and 0.2. Variation of the pulsed-cathodic potentials could modulate the composition of the CZT. More negative cathodic potentials resulted in increased Zn content. The nanowires showed an electronic band gap of about 1.6 eV. Mott-Schottky analyses indicated p-type semiconductor properties of both as-deposited and annealed CZT materials. Increase in Zn content increased the charge carrier density. Annealing of the deposits resulted in lower charge carrier densities, in the order of 10(15) cm(-3). (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:5932 / 5942
页数:11
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