3D Tailored Crumpling of Block-Copolymer Lithography on Chemically Modified Graphene

被引：59

作者：

Kim, Ju Young ^{[1
]}

Lim, Joonwon ^{[1
]}

Jin, Hyeong Min ^{[1
]}

Kim, Bong Hoon ^{[1
]}

Jeong, Seong-Jun ^{[1
]}

Choi, Dong Sung ^{[1
]}

Li, Dong Jun ^{[1
]}

Kim, Sang Ouk ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Natl Creat Res Initiat Ctr Multidimens Directed N, Daejeon 34141, South Korea

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

3D; block copolymers; grapheme; instability; self-assembly; LARGE-AREA GRAPHENE; THIN-FILMS; SOLID-SURFACES; PATTERNS; ARRAYS; TEMPLATES; POLYMERS; LAYER; WATER; MULTIPLICATION;

D O I：

10.1002/adma.201504590

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Novel 3D self-assembled nanopatterning is presented via tailored crumpling of chemically modified graphene. Block-copolymer self-assembly formed on a layer of chemically modified graphene provides highly dense and uniform 2D nanopatterns, and the controlled crumpling of the chemically modified graphene by mechanical instabilities realizes the controlled 3D transformation of the self-assembled nanopatterns.

引用

页码：1591 / 1596

页数：6

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