Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

被引：235

作者：

Cheng, Joy Y. ^{[1
]}

Sanders, Daniel P. ^{[1
]}

Truong, Hoa D. ^{[1
]}

Harrer, Stefan ^{[2
]}

Friz, Alexander ^{[1
]}

Holmes, Steven ^{[2
]}

Colburn, Matthew ^{[2
]}

Hinsberg, William D. ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

[2] IBM Albany Nanotech, Albany, NY 12203 USA

来源：

ACS NANO | 2010年 / 4卷 / 08期

关键词：

directed self-assembly; graphoepitaxy; chemical epitaxy; block copolymer; photoresist; SPARSE CHEMICAL-PATTERNS; BLOCK-COPOLYMERS; THIN-FILMS; GRAPHOEPITAXY; DENSITY; LAYERS; MEDIA;

D O I：

10.1021/nn100686v

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report novel strategies to integrate block copolymer self-assembly with 193 nm water immersion lithography. These strategies employ commercially available positive tone chemically amplified photoresists to spatially encode directing information into precise topographical or chemical prepatterns for the directed self-assembly of block copolymers. Each of these methods exploits the advantageous solubility and thermal properties of polarity-switched positive tone photoresist materials. Precisely registered, sublithographic self-assembled structures are fabricated using these versatile integration schemes which are fully compatible with current optical lithography patterning materials, processes, and tooling.

引用

页码：4815 / 4823

页数：9

共 46 条

[1] A novel resist freeze process for double imaging
Abdallah, David J.
Alemy, Eric
Chakrapani, Srinivasan
Padmanaban, Munirathna
Dammel, Ralph R.
[J]. JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2008, 21 (05) : 655 - 663
[2] ANDO T, 2009, P SPIE, V7273
[3] Double patterning materials for sub-40nm application
Anno, Yusuke
Kakizawa, Tomohiro
Hori, Masafumi
Soyano, Akimasa
Fujiwara, Koichi
Nakamura, Atsushi
Sugiura, Makoto
Yamaguchi, Yoshikazu
Shimokawa, Tsutomu
[J]. JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2008, 21 (05) : 691 - 696
[4] BAE YC, 2009, P SPIE, V7273
[5] Facile routes to patterned surface neutralization layers for block copolymer lithography
Bang, Joona
Bae, Joonwon
Lowenhielm, Peter
Spiessberger, Christian
Given-Beck, Susan A.
Russell, Thomas P.
Hawker, Craig J.
[J]. ADVANCED MATERIALS, 2007, 19 (24) : 4552 - +
[6] Graphoepitaxy of self-assembled block copolymers on two-dimensional periodic patterned templates
Bita, Ion
Yang, Joel K. W.
Jung, Yeon Sik
Ross, Caroline A.
Thomas, Edwin L.
Berggren, Karl K.
[J]. SCIENCE, 2008, 321 (5891) : 939 - 943
[7] Polymer self assembly in semiconductor microelectronics
Black, C. T.
Ruiz, R.
Breyta, G.
Cheng, J. Y.
Colburn, M. E.
Guarini, K. W.
Kim, H.-C.
Zhang, Y.
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2007, 51 (05) : 605 - 633
[8] Low-variability negative and iterative spacer processes for sub-30-nm lines and holes
Carlson, Andrew
Liu, Tsu-Jae King
[J]. JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2009, 8 (01):
[9] Dense self-assembly on sparse chemical patterns: Rectifying and multiplying lithographic patterns using block copolymers
Cheng, Joy Y.
Rettner, Charles T.
Sanders, Daniel P.
Kim, Ho-Cheol
Hinsberg, William D.
[J]. ADVANCED MATERIALS, 2008, 20 (16) : 3155 - 3158
[10] Directed Self-assembly on Sparse Chemical Patterns for Lithographic Applications
Cheng, Joy Y.
Nelson, Alshakim
Rettner, Charles T.
Sanders, Daniel P.
Sutherland, Alexander
Pitera, Jed W.
Na, Young-Hye
Kim, Ho-Cheol
Hinsberg, William D.
[J]. JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2009, 22 (02) : 219 - 222

← 1 2 3 4 5 →