Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

被引：235

作者：

Cheng, Joy Y. ^{[1
]}

Sanders, Daniel P. ^{[1
]}

Truong, Hoa D. ^{[1
]}

Harrer, Stefan ^{[2
]}

Friz, Alexander ^{[1
]}

Holmes, Steven ^{[2
]}

Colburn, Matthew ^{[2
]}

Hinsberg, William D. ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

[2] IBM Albany Nanotech, Albany, NY 12203 USA

来源：

ACS NANO | 2010年 / 4卷 / 08期

关键词：

directed self-assembly; graphoepitaxy; chemical epitaxy; block copolymer; photoresist; SPARSE CHEMICAL-PATTERNS; BLOCK-COPOLYMERS; THIN-FILMS; GRAPHOEPITAXY; DENSITY; LAYERS; MEDIA;

D O I：

10.1021/nn100686v

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report novel strategies to integrate block copolymer self-assembly with 193 nm water immersion lithography. These strategies employ commercially available positive tone chemically amplified photoresists to spatially encode directing information into precise topographical or chemical prepatterns for the directed self-assembly of block copolymers. Each of these methods exploits the advantageous solubility and thermal properties of polarity-switched positive tone photoresist materials. Precisely registered, sublithographic self-assembled structures are fabricated using these versatile integration schemes which are fully compatible with current optical lithography patterning materials, processes, and tooling.

引用

页码：4815 / 4823

页数：9

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