Two-dimensional patterning of flexible designs with high half-pitch resolution by using block copolymer lithography

A two-dimensional patterning method that allows for flexible designs is demonstrated by combining bottom-up diblock copolymer self-assembly with top-down electron beam lithography (EBL), which increases the applicability of block copolymer lithography to nanodevice fabrication. Both bent lamellae and concentric cylinders (see figure) can be formed between the intentionally designed 2D EBL guiding patterns, and can be successfully transferred to a semiconductor substrate with a 1.6 nm half-pitch resolution.