Negative band gaps in dilute InNxSb1-x alloys -: art. no. 136801

被引：51

作者：

Veal, TD ^{[1
]}

Mahboob, I ^{[1
]}

McConville, CF ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 13期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevLett.92.136801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A thin layer of InNSb has been fabricated by low energy nitrogen implantation in the near-surface region of InSb. X-ray photoelectron spectroscopy indicates that nitrogen occupies similar to6% of the anion lattice sites. High-resolution electron-energy-loss spectroscopy of the conduction band electron plasma reveals the absence of a depletion layer for this alloy, thus indicating that the Fermi level is located below the valence band maximum (VBM). The plasma frequency for this alloy combined with the semiconductor statistics indicates that the Fermi level is located above the conduction band minimum (CBM). Consequently, the CBM is located below the VBM, indicating a negative band gap material has been formed. These measurements are consistent with k.p calculations for InN0.06Sb0.94 that predict a semimetallic band structure.

引用

页码：136801 / 1

页数：4

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