In situ characterization of the nitridation of AIII-BV semiconductor surfaces by means of X-ray photoelectron spectroscopy

被引：37

作者：

Hecht, JD ^{[1
]}

Frost, F ^{[1
]}

Chassé, T ^{[1
]}

Hirsch, D ^{[1
]}

Neumann, H ^{[1
]}

Schindler, A ^{[1
]}

Bigl, F ^{[1
]}

机构：

[1] Inst Oberflachenmodifizierung EV, D-04318 Leipzig, Germany

来源：

APPLIED SURFACE SCIENCE | 2001年 / 179卷 / 1-4期

关键词：

ion beam sputtering; nitridation; InAs; InP; InSb; X-ray photoelectron spectroscopy;

D O I：

10.1016/S0169-4332(01)00279-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of low-energy N-2(+) ion beam bombardment on InAs, InP, and InSb surfaces has been studied using in situ X-ray photoelectron spectroscopy. The formation of a nitrided surface layer has been observed for all investigated AIII-BV semiconductors. Beside the emerging In-N bonds also P-N bonds were detected for InP, whereas for InAs and InSb, there is no evidence for the formation of As-N and Sb-N bonds, respectively. An analysis of the N Is core level peak also reveals the build-in of interstitial nitrogen. A change of the ion beam incidence angle has great influence on the composition of the surface layer as demonstrated for InP. The amount of nitrogen in P-N bonds and of interstitial nitrogen decreases for changing the ion incidence to grazing angles. A detailed XPS analysis provides information on the temporal evolution of the process of nitridation and the thickness of the nitrided surface layer. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：196 / 202

页数：7

共 26 条

[1] DEPOSITION OF INDIUM NITRIDE BY LOW-ENERGY MODULATED INDIUM AND NITROGEN ION-BEAMS [J].

BELLO, I ;

LAU, WM ;

LAWSON, RPW ;

FOO, KK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :1642-1646

[2] NITRIDATION OF GAAS(110) USING ENERGETIC N+ AND N2+ ION-BEAMS [J].

DELOUISE, LA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (03) :609-614

[3] Ion beam smoothing of indium-containing III-V compound semiconductors [J].

Frost, F ;

Schindler, A ;

Bigl, F .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (06) :663-668

[4] Reactive ion beam etching of InSb and InAs with ultrasmooth surfaces [J].

Frost, F ;

Schindler, A ;

Bigl, F .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (05) :523-527

[5] Ion beam etching induced structural and electronic modification of InAs and InSb surfaces studied by Raman spectroscopy [J].

Frost, F ;

Lippold, G ;

Schindler, A ;

Bigl, F .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (12) :8378-8385

[6]

FROST F, COMMUNICATION

[7] Electronic structure of indium nitride studied by photoelectron spectroscopy [J].

Guo, QX ;

Nishio, M ;

Ogawa, H ;

Wakahara, A ;

Yoshida, A .

PHYSICAL REVIEW B, 1998, 58 (23) :15304-15306

[8] Nitridation of GaP(001) surface by electron cyclotron resonance assisted N2 plasma [J].

Hashizume, T .

APPLIED PHYSICS LETTERS, 1999, 75 (05) :615-617

[9] Formation of an Sb-N compound during nitridation of InSb (001) substrates using atomic nitrogen [J].

Haworth, L ;

Lu, J ;

Hill, P ;

Westwood, DI ;

Macdonald, JE ;

Hartmann, N ;

Schneider, A ;

Zahn, DRT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :2254-2260

[10] Preconditioning of c-plane sapphire for GaN molecular beam epitaxy by electron cyclotron resonance plasma nitridation [J].

Heinlein, C ;

Grepstad, JK ;

Einfeldt, S ;

Hommel, D ;

Berge, T .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6023-6027

← 1 2 3 →