Electronic structure of indium nitride studied by photoelectron spectroscopy

被引：46

作者：

Guo, QX ^{[1
]}

Nishio, M

Ogawa, H

Wakahara, A

Yoshida, A

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan

[2] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.58.15304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoemission studies were carried out on indium nitride single crystals. The peaks for N 1s, In 3d(5/2), and In 3d(3/2) were observed with binding energies of 396.0, 443.6, and 451.2 eV, respectively. We observed a valence band with width of 10 eV showing two distinguishable features at binding energy of 3.9 and 7.4 eV. Reasonable agreement for the valence-band width was found between the experimental data and the theoretical results calculated using empirical pseudopotential method. [S0163-1829(98)07047-7].

引用

页码：15304 / 15306

页数：3

共 20 条

[1] Shortest wavelength semiconductor laser diode [J].

Akasaki, I ;

Sota, S ;

Sakai, H ;

Tanaka, T ;

Koike, M ;

Amano, H .

ELECTRONICS LETTERS, 1996, 32 (12) :1105-1106

[2] OPTICAL AND STRUCTURAL-PROPERTIES OF III-V NITRIDES UNDER PRESSURE [J].

CHRISTENSEN, NE ;

GORCZYCA, I .

PHYSICAL REVIEW B, 1994, 50 (07) :4397-4415

[3] PSEUDOPOTENTIAL BAND-STRUCTURE OF INDIUM NITRIDE [J].

FOLEY, CP ;

TANSLEY, TL .

PHYSICAL REVIEW B, 1986, 33 (02) :1430-1433

[4] GROWTH OF ALXIN1-XN SINGLE-CRYSTAL FILMS BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J].

GUO, QX ;

OGAWA, H ;

YOSHIDA, A .

JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :462-466

[5] GROWTH OF INN FILMS ON GAAS(111) AND GAP(111) SUBSTRATES BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J].

GUO, QX ;

OGAWA, H ;

YAMANO, H ;

YOSHIDA, A .

APPLIED PHYSICS LETTERS, 1995, 66 (06) :715-717

[6]

HIMPSEL F, 1991, SPRINGER SERIES SOLI, V95

[7] EPITAXIAL-GROWTH OF INN BY HALOGEN TRANSPORT METHOD [J].

IGARASHI, O .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9A) :2665-2668

[8] OVERGROWTH OF INDIUM NITRIDE THIN-FILMS ON ALUMINUM NITRIDE NUCLEATED (00.1) SAPPHIRE BY REACTIVE MAGNETRON SPUTTERING [J].

KISTENMACHER, TJ ;

BRYDEN, WA .

APPLIED PHYSICS LETTERS, 1991, 59 (15) :1844-1846

[9] AUGER-ELECTRON AND X-RAY PHOTOELECTRON-SPECTROSCOPY OF SPUTTER DEPOSITED ALUMINUM NITRIDE [J].

KOVACICH, JA ;

KASPERKIEWICZ, J ;

LICHTMAN, D ;

AITA, CR .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2935-2939

[10] X-RAY PHOTOELECTRON-SPECTROSCOPY AND THEORY OF THE VALENCE-BAND AND SEMICORE GA 3D STATES IN GAN [J].

LAMBRECHT, WRL ;

SEGALL, B ;

STRITE, S ;

MARTIN, G ;

AGARWAL, A ;

MORKOC, H ;

ROCKETT, A .

PHYSICAL REVIEW B, 1994, 50 (19) :14155-14160

← 1 2 →