Violet photoluminescence from Ge+-implanted Si-based nanoscale SiO2 islands array

被引：16

作者：

Zou, JP ^{[1
]}

Mei, YF

Shen, JK

Wu, JH

Wu, XL

Bao, XM

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

PHYSICS LETTERS A | 2002年 / 301卷 / 1-2期

关键词：

D O I：

10.1016/S0375-9601(02)00899-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ge ions were implanted into a SiO2 nanoscale islands array at an energy of 200 keV with a dose of 1 X 10(17) cm(-2). Violet photoluminescence (PL) bands peaked at 370, 396, and 415 nm from Ge+ implanted SiO2 nanoscale islands array were observed, and the violet PL spectra reached a maximum after annealing in N-2 ambient at 700degreesC. From photoluminescence excitation (PLE) spectra of samples we found an excitation band at around 270 nm besides a widely known excitation band at around 240 run. We tentatively conclude that PLE band at around 270 nm and luminescence at 370 and 415 run may be caused by Ge-associated neutral oxygen vacancy (denoted as dropGe-Sidrop and dropGe-Gedrop), while the 396 run PL band arise from GeO color centers. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：96 / 100

页数：5

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