Pt-Ga Ohmic contacts to n-ZnO using focused ion beams

被引：36

作者：

Inumpudi, A

Iliadis, AA

Krishnamoorthy, S

Choopun, S

Vispute, RD

Venkatesan, T

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

[2] Univ Maryland, Ctr Superconduct Res, Dept Phys, College Pk, MD 20742 USA

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0038-1101(02)00176-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High quality platinum Ohmic contacts on unintentionally doped n-type ZnO epitaxial layers grown by pulsed laser deposition on (0 0 0 1) sapphire substrates, are reported. The contacts were formed by using a Ga focused ion beam and Pt direct-write metal deposition. Contact resistance measurements by the transmission line method, produced values as low as 3 x 10(-4) Omega cm(2) without any annealing. An optimum Ga surface-modification dosage window is determined, within which the current transport mechanism of these contacts was found to proceed mainly by tunneling through the Ga-ZnO interface layer. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：1665 / 1668

页数：4

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