Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition

被引：13

作者：

Iliadis, AA ^{[1
]}

Andronescu, SN

Yang, W

Vispute, RD

Stanishevsky, A

Orloff, JH

Sharma, RP

Venkatesan, T

Wood, MC

Jones, KA

机构：

[1] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA

[2] Univ Maryland, Dept Phys, Ctr Superconduct, College Pk, MD 20742 USA

[3] USA, Res Lab, Adelphi, MD 20783 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 03期

关键词：

focused ion beam (FIB); ohmic; p-6H-SiC; surface modification;

D O I：

10.1007/s11664-999-0002-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low resistance Pt and W ohmic metallizations to p-type 6H-SiC, using focused ion beam (FIB) surface-modification and in-situ direct-write metal deposition without annealing, are reported. FIB(Ga) surface-modification and in-situ deposition of Pt, and W showed minimum contact resistance values of 2.8 x 10(-4) ohm-cm(2) to 2.5 x 10(-4) ohm-cm(2), respectively A comparison with ex-situ pulse laser deposited Pt on surface-modified areas showed comparable cent-act resistance values and similar behavior. Auger and secondary ion mass spectroscopy analysis showed a significant (similar to 4% a.c.) incorporation of Ga within a 15 nm distance from the SiC surface with surface-modification. Atomic force microscopy studies showed that surface-modification process smooths out the SiC surface significantly.

引用

页码：136 / 140

页数：5

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