Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor

被引：20

作者：

Dauelsberg, M

Kadinski, L

Makarov, YN

Bergunde, T

Strauch, G

Weyers, M

机构：

[1] Univ Erlangen Nurnberg, Inst Fluid Mech, D-91058 Erlangen, Germany

[2] Ferdinand Braun Inst Hochstfrequenztecn, D-12489 Berlin, Germany

[3] AIXTRON AG, D-52072 Aachen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 208卷 / 1-4期

关键词：

MOVPE of GaInP; numerical simulation; process optimization;

D O I：

10.1016/S0022-0248(99)00447-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Modeling and experimental studies of Ga1-xInxP growth in the Planetary Reactor(R) are presented and the mechanisms governing growth rate and compositional uniformity are identified. Reaction rate constants for the kinetically limited formation of wall deposits in this specific reactor are determined and included in the computational model. Several types of the Planetary Reactor are compared to each other. The reasons for the non-unity group III solid-vapor distribution coefficient of Ga1-xInxP are analyzed. (C) 2000 Elsevier Science B.V. All rights reserved.

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页码：85 / 92

页数：8

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