p-type doping with N and Li acceptors of ZnS grown by metalorganic vapor phase epitaxy

被引：39

作者：

Svob, L ^{[1
]}

Thiandoume, C ^{[1
]}

Lusson, A ^{[1
]}

Bouanani, M ^{[1
]}

Marfaing, Y ^{[1
]}

Gorochov, O ^{[1
]}

机构：

[1] CNRS, Lab Phys Solides & Cristallogenese, F-92195 Meudon, France

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 13期

关键词：

D O I：

10.1063/1.126139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnS layers were grown by metalorganic vapor phase epitaxy on GaAs substrates using diethylzinc, ditertiarybutyl sulphide, and triallylamine as organometallic sources. After postgrowth rapid thermal annealing, the ZnS layers showed p-type conductivity with hole concentrations up to 10(18) cm(-3). Photoluminescence measurements gave additional indications of the presence of electrically active nitrogen acceptors. In separate experiments, lithium was diffused from a LiH solid source into ZnS layers grown without the nitrogen precursor. High-conductivity p-type material was directly obtained with no need of thermal anneal. (C) 2000 American Institute of Physics. [S0003-6951(00)00413-7].

引用

页码：1695 / 1697

页数：3

共 17 条

[1] Predictor of p-type doping in II-VI semiconductors [J].

Chadi, DJ .

PHYSICAL REVIEW B, 1999, 59 (23) :15181-15183

[2]

CHEVALLIER J, 1988, ANNU REV MATER SCI, V18, P219

[3]

CLERJAUD B, 1996, SOLID STATE COMMUN, V85, P72

[4]

Goesmann F, 1998, J CRYST GROWTH, V184, P406

[5]

GUTOWSKI J, 1997, EMIS DATAREVIEWS, P134

[6] CHARACTERIZATION OF P-TYPE ZNSE [J].

HAASE, MA ;

CHENG, H ;

DEPUYDT, JM ;

POTTS, JE .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :448-452

[7] HEAVY P-DOPING OF ZNTE BY MOLECULAR-BEAM EPITAXY USING A NITROGEN PLASMA SOURCE [J].

HAN, J ;

STAVRINIDES, TS ;

KOBAYASHI, M ;

GUNSHOR, RL ;

HAGEROTT, MM ;

NURMIKKO, AV .

APPLIED PHYSICS LETTERS, 1993, 62 (08) :840-842

[8] P-TYPE CONDUCTION IN ZNS GROWN BY VAPOR-PHASE EPITAXY [J].

IIDA, S ;

YATABE, T ;

KINTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04) :L535-L537

[9] Low-resistivity p-type ZnSe, ZnSSe and MgZnSSe grown by gas-source molecular beam epitaxy [J].

Imaizumi, M ;

Kuroki, H ;

Endoh, Y ;

Suita, M ;

Ohtsuka, K ;

Isu, T ;

Namizaki, H ;

Nunoshita, M .

JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :257-260

[10] ORIGIN OF THE LOW DOPING EFFICIENCY OF NITROGEN ACCEPTORS IN ZNSE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

KAMATA, A ;

MITSUHASHI, H ;

FUJITA, H .

APPLIED PHYSICS LETTERS, 1993, 63 (24) :3353-3354

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