Low-resistivity p-type ZnSe, ZnSSe and MgZnSSe grown by gas-source molecular beam epitaxy

被引：6

作者：

Imaizumi, M ^{[1
]}

Kuroki, H ^{[1
]}

Endoh, Y ^{[1
]}

Suita, M ^{[1
]}

Ohtsuka, K ^{[1
]}

Isu, T ^{[1
]}

Namizaki, H ^{[1
]}

Nunoshita, M ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CORP,MAT & ELECTR DEVICES LAB,AMAGASAKI,HYOGO 661,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00571-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Active-nitrogen-doped p-ZnSe, ZnSSe and MgZnSSe layers are successfully grown by GSMBE employing group VI hydride sources. We performed a SIMS analysis for the p-ZnSe layers and a hydrogen -concentration of about 1 X 10(18) cm(-3) was detected. With regard to the nitrogen activation as accepters, data of GSMBE-grown p-ZnSe are not different cm from those of solid-source MBE. A p-ZnSe layer with a resistivity of 1 Omega . cm and a net acceptor concentration of 1 x 10(18) cm(-3) and a p-MgxZnSySe layer(x = 0.10 and y = 0.15) with a net acceptor concentration of 1.8 x 10(17) cm(-3) is obtained. These values are comparable to the best values ever attained by various growth methods. We conclude that incorporated hydrogen has no significant effect on the electrical properties of GSMBE-grown p-ZnSe layers.

引用

页码：257 / 260

页数：4

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