BLUE-LIGHT-EMITTING LASER-DIODES BASED ON ZNSE/ZNCDSE STRUCTURE GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：13

作者：

IMAIZUMI, M

ENDOH, Y

OHTSUKA, K

SUITA, M

ISU, T

NUNOSHITA, M

机构：

[1] Semiconductor Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, 661

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 1A期

关键词：

ZNSE; H2SE; GAS SOURCE MOLECULAR BEAM EPITAXY; LASER DIODE; ZNSE/ZNCDSE MQW;

D O I：

10.1143/JJAP.33.L13

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diode structure with a (ZnSe/ZnCdSe)5 multiple quantum-well active layer sandwiched between n- and p-ZnSe layers was grown on a (100) GaAs substrate by gas source molecular beam epitaxy using H2Se. Stimulated emission from the diode structure was observed at a wavelength of 486 nm under a pulsed current injection at 77 K. The threshold current density was 1.16 kA/cm2.

引用

页码：L13 / L19

页数：7

共 12 条

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