GROWTH OF LATTICE-MATCHED ZNSE-ZNS SUPERLATTICES ONTO GAAS SUBSTRATES BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：18

作者：

ONIYAMA, H

YAMAGA, S

YOSHIKAWA, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 12期

关键词：

D O I：

10.1143/JJAP.28.L2137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2137 / L2140

页数：4

共 13 条

[1] EFFECTS OF LATTICE-MATCHING ON DOPING CHARACTERISTICS OF ZNSXSE1-X EPITAXIAL LAYERS ON GAAS SUBSTRATES GROWN BY OMVPE
FUJITA, S
TERADA, K
SAKAMOTO, T
FUJITA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 94 (01) : 102 - 108
[2] MBE-GROWN ZNTE-ZNS STRAINED-LAYER SUPERLATTICES
KARASAWA, T
OHKAWA, K
MITSUYU, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 547 - 551
[3] EFFECTS OF STRAIN AND TEMPERATURE ON EXCITONIC EMISSIONS IN ZNSE-ZNS STRAINED-LAYER SUPERLATTICES GROWN BY LOW-PRESSURE MOCVD
KAWAKAMI, Y
TAGUCHI, T
HIRAKI, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 714 - 719
[4] PHOTOLUMINESCENCE STUDY OF ZNSE-ZNTE STRAINED-LAYER SUPERLATTICES GROWN ON INP SUBSTRATES
KOBAYASHI, M
MINO, N
KATAGIRI, H
KIMURA, R
KONAGAI, M
TAKAHASHI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 773 - 778
[5] VARIATION OF MISFIT STRAIN IN ZNSE HETEROEPITAXIAL LAYERS WITH TEMPERATURE, LAYER THICKNESS AND GROWTH TEMPERATURE
MATSUMOTO, T
IIJIMA, T
ISHIDA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (05): : L892 - L895
[6] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS
MATTHEWS, JW
BLAKESLEE, AE
[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) : 265 - 273
[7] COHERENT GROWTH OF ZNSE ON GAAS BY MOCVD
MITSUHASHI, H
MITSUISHI, I
MIZUTA, M
KUKIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L578 - L580
[8] METALORGANIC MOLECULAR-BEAM EPITAXY OF ZNSE FILMS USING DIMETHYLZINC AND HYDROGEN SELENIDE
ONIYAMA, H
YAMAGA, S
YOSHIKAWA, A
KASAI, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 679 - 685
[9] ONIYAMA H, IN PRESS 1989 MRS FA
[10] DISLOCATION PROPAGATION INTO MBE GROWN GAAS-LAYERS UNDER THE CONDITION OF MISFIT DISLOCATION GENERATION
SHINOHARA, M
ITO, T
YAMADA, K
IMAMURA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (10): : L818 - L820

← 1 2 →