DISLOCATION PROPAGATION INTO MBE GROWN GAAS-LAYERS UNDER THE CONDITION OF MISFIT DISLOCATION GENERATION

被引：5

作者：

SHINOHARA, M

ITO, T

YAMADA, K

IMAMURA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 10期

关键词：

D O I：

10.1143/JJAP.24.L818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L818 / L820

页数：3

共 6 条

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
ABRAHAMS, MS
WEISBERG, LR
BUIOCCHI, CJ
BLANC, J
[J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &
[2] CHARGE COLLECTION SCANNING ELECTRON-MICROSCOPY
LEAMY, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : R51 - R80
[3] USE OF MISFIT STRAIN TO REMOVE DISLOCATIONS FROM EPITAXIAL THIN-FILMS
MATTHEWS, JW
BLAKESLEE, AE
MADER, S
[J]. THIN SOLID FILMS, 1976, 33 (02) : 253 - 266
[4] MISFIT DISLOCATION GENERATION FOR MBE GROWN GAAS ON IN-DOPED LEC-GAAS SUBSTRATES
SHINOHARA, M
ITO, T
YAMADA, K
IMAMURA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (09): : L711 - L713
[5] SHINOHARA M, UNPUB J APPL PHYS
[6] YAMADA K, UNPUB J CRYSTAL GROW