MISFIT DISLOCATION GENERATION FOR MBE GROWN GAAS ON IN-DOPED LEC-GAAS SUBSTRATES

被引：11

作者：

SHINOHARA, M

ITO, T

YAMADA, K

IMAMURA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 09期

关键词：

D O I：

10.1143/JJAP.24.L711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L711 / L713

页数：3

共 9 条

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[4]

JACOB G, 1982, J CRYST GROWTH, V57, P493

[5] TRANSMISSION ELECTRON-MICROSCOPY STUDY OF MICRODEFECTS IN DISLOCATION-FREE GAAS AND INP CRYSTALS [J].

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[6] QUANTITATIVE ELECTRON-MICROPROBE ANALYSIS OF THIN-FILMS ON SUBSTRATES [J].

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1974, 18 (04) :352-363

[7] CHARGE COLLECTION SCANNING ELECTRON-MICROSCOPY [J].

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[8] USE OF MISFIT STRAIN TO REMOVE DISLOCATIONS FROM EPITAXIAL THIN-FILMS [J].

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THIN SOLID FILMS, 1976, 33 (02) :253-266

[9]

SHINOHARA M, 1985, UNPUB J APPL PHYS

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