VARIATION OF MISFIT STRAIN IN ZNSE HETEROEPITAXIAL LAYERS WITH TEMPERATURE, LAYER THICKNESS AND GROWTH TEMPERATURE

被引：15

作者：

MATSUMOTO, T ^{[1
]}

IIJIMA, T ^{[1
]}

ISHIDA, T ^{[1
]}

机构：

[1] YAMANASHI UNIV,FAC ENGN,DEPT ELECTR ENGN,KOFU,YAMANASHI 400,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 05期

关键词：

D O I：

10.1143/JJAP.27.L892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L892 / L895

页数：4

共 21 条

[1] ELECTROELASTIC PROPERTIES OF SULFIDES, SELENIDES, AND TELLURIDES OF ZINC AND CADMIUM [J].

BERLINCOURT, D ;

SHIOZAWA, LR ;

JAFFE, H .

PHYSICAL REVIEW, 1963, 129 (03) :1009-&

[2] ELASTIC-CONSTANTS OF GAAS FROM 2 K TO 320 K [J].

COTTAM, RI ;

SAUNDERS, GA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (13) :2105-2118

[3] PRECISION THERMAL EXPANSION MEASUREMENTS OF SEMI-INSULATING GAAS [J].

FEDER, R ;

LIGHT, T .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4870-&

[4] ELASTIC-CONSTANTS OF ZNSE [J].

HODGINS, CG ;

IRWIN, JC .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 28 (02) :647-652

[5] DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].

HORNSTRA, J ;

BARTELS, WJ .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517

[6]

Kuskov V. I., 1973, Soviet Physics - Solid State, V14, P1869

[7] ELASTIC CONSTANTS OF ZNTE AND ZNSE BETWEEN 77 DEGREES-300 DEGREES K [J].

LEE, BH .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :2984-&

[8] OBSERVATION OF STRAIN EFFECTS AND EVIDENCE OF GALLIUM AUTODOPING IN MOLECULAR-BEAM-EPITAXIAL ZNSE ON (100)GAAS [J].

MAR, HA ;

PARK, RM .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :1229-1232

[9] ELECTRICAL AND LUMINESCENT PROPERTIES OF IN-DOPED ZNSE GROWN BY LOW-PRESSURE VAPOR-PHASE EPITAXY [J].

MATSUMOTO, T ;

IIJIMA, T ;

KATSUMATA, Y ;

ISHIDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10) :L1736-L1739

[10] GROWTH OF HIGH-QUALITY ZNSE LAYERS IN HYDROGEN PLASMA [J].

MATSUMOTO, T ;

YOSHIDA, S ;

ISHIDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (05) :L413-L415

← 1 2 3 →