ZN1-XCDXSE (X=0.2-0.3) SINGLE-QUANTUM-WELL LASER-DIODES WITHOUT GAAS BUFFER LAYERS

被引：23

作者：

HAYASHI, S

TSUJIMURA, A

YOSHII, S

OHKAWA, K

MITSUYU, T

机构：

[1] Central Research Laboratories, Matsushita Electric Ind. Co. Ltd, Moriguchi, Osaka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 10B期

关键词：

GREEN LASER DIODES; BLUE-GREEN LASER DIODES; ZNSE; ZNCDSE; NITROGEN RADICAL DOPING; CL DOPING; BUFFER LAYER;

D O I：

10.1143/JJAP.31.L1478

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Laser diode action has been observed from a ZnSe-based single-quantum-well structure grown on GaAs substrates without GaAs buffer layers. The lasers emit coherent light under pulsed current injection at 77 K in a wide wavelength range from 490 nm to 520 nm depending on the quantum well composition ratio. In spite of uncoated facets, the lowest threshold current density of the lasers was as low as 160 A/cm2 . The output power from the lasers exceeded 100 mW per facet.

引用

页码：L1478 / L1480

页数：3

共 13 条

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