GROWTH OF ZNS AND ZNSSE BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING HYDRIDE GROUP-VI SOURCES

被引：4

作者：

IMAIZUMI, M

ENDOH, Y

SUITA, M

OHTSUKA, KI

ISU, T

NUNOSHITA, M

机构：

[1] Semiconductor Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, 661

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80032-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnS and ZnSSe layers were successfully grown by gas-source molecular beam epitaxy using hydride H2S and H2Se sources, and their surface morphology was very smooth. The full width at half maximum of X-ray rocking curve of the ZnSxSe1-x layer with S composition x of 0.06 (lattice-matching to a GaAs substrate) was as low as 22 are sec. For the ZnSSe layer, the electron concentration was controlled in a 10(17) cm(-3) range by using n-type dopant gallium, and a net acceptor concentration of 7.3 x 10(17) cm(-3) was obtained by using active-nitrogen as p-type dopant. Using n- and p-ZnSSe layers, separate-confinement-heterostructure multiple-quantum-well laser diodes were fabricated. Lasing operation was observed by injecting a pulsed current at 77 K.

引用

页码：707 / 711

页数：5

共 10 条

[1] METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSE USING DIETHYLZINC AND DIETHYLSELENIDE [J].

ANDO, H ;

TAIKE, A ;

KIMURA, R ;

KONAGAI, M ;

TAKAHASHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04) :L279-L281

[2] GROWTH OF N-ZNSE AND P-ZNSE BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING METAL ZN AND H2SE [J].

IMAIZUMI, M ;

ENDOH, Y ;

OHTSUKA, K ;

ISU, T .

JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) :366-370

[3] BLUE-LIGHT-EMITTING LASER-DIODES BASED ON ZNSE/ZNCDSE STRUCTURE GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

IMAIZUMI, M ;

ENDOH, Y ;

OHTSUKA, K ;

SUITA, M ;

ISU, T ;

NUNOSHITA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (1A) :L13-L19

[4] GAS-SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSE USING METAL ZN AND H2SE [J].

IMAIZUMI, M ;

ENDOH, Y ;

OHTSUKA, K ;

ISU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (6A) :3505-3509

[5] ACTIVE-NITROGEN-DOPED P-TYPE ZNSE GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FOR BLUE-LIGHT-EMITTING DEVICES [J].

IMAIZUMI, M ;

ENDOH, Y ;

OHTSUKA, K ;

ISU, T ;

NUNOSHITA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (12A) :L1725-L1727

[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF P-TYPE AND N-TYPE ZNSE HOMOEPITAXIAL LAYERS [J].

OHKAWA, K ;

UENO, A ;

MITSUYU, T .

JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :375-384

[7] GROWTH OF LATTICE-MATCHED ZNSE-ZNS SUPERLATTICES ONTO GAAS SUBSTRATES BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

ONIYAMA, H ;

YAMAGA, S ;

YOSHIKAWA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2137-L2140

[8] HEAVILY DOPED P-ZNSE-N GROWN BY MOLECULAR-BEAM EPITAXY [J].

QIU, J ;

DEPUYDT, JM ;

CHENG, H ;

HAASE, MA .

APPLIED PHYSICS LETTERS, 1991, 59 (23) :2992-2994

[9] P-TYPE CONDUCTIVITY CONTROL OF ZNSE HIGHLY DOPED WITH NITROGEN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

TAIKE, A ;

MIGITA, M ;

YAMAMOTO, H .

APPLIED PHYSICS LETTERS, 1990, 56 (20) :1989-1991

[10] METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSE AND ZNS ON GAAS SUBSTRATES PRETREATED WITH (NH4)2SX SOLUTION [J].

WU, YH ;

TOYODA, T ;

KAWAKAMI, Y ;

FUJITA, S ;

FUJITA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (01) :L144-L147

← 1 →