P-TYPE CONDUCTIVITY CONTROL OF ZNSE HIGHLY DOPED WITH NITROGEN BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：45

作者：

TAIKE, A

MIGITA, M

YAMAMOTO, H

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 20期

关键词：

D O I：

10.1063/1.102996

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

p-type ZnSe with resistivity low enough for device application has been realized by metalorganic molecular beam epitaxy. This method has enabled growth of p-type ZnSe doped with nitrogen at concentrations as high as 1019 cm-3 by using ammonia as a dopant source. The dependence of photoluminescence and electrical properties on substrate temperature has been investigated. Hall measurements show p-type conductivity with a resistivity of 0.57 Ω cm, a carrier concentration of 5.6×1017 cm -3, and a Hall mobility of 20 cm2/V s.

引用

页码：1989 / 1991

页数：3

共 10 条

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