CHARACTERIZATION OF NITROGEN-DOPED ZNSE AND ZNS0.06SE0.94 FILMS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

被引：32

作者：

SUEMUNE, I

YAMADA, K

MASATO, H

KANDA, T

KAN, Y

YAMANISHI, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 11期

关键词：

D O I：

10.1143/JJAP.27.L2195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2195 / L2198

页数：4

共 10 条

[1] GROWTH OF P-TYPE ZNSE-LI BY MOLECULAR-BEAM EPITAXY
CHENG, H
DEPUYDT, JM
POTTS, JE
SMITH, TL
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 147 - 149
[2] COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS
DEAN, PJ
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 81 (02): : 625 - 646
[3] KANDA T, IN PRESS J CRYST GRO
[4] LUMINESCENCE STUDIES OF INDIVIDUAL DISLOCATIONS IN II-VI (ZNSE) AND III-V (INP) SEMICONDUCTORS
MYHAJLENKO, S
BATSTONE, JL
HUTCHINSON, HJ
STEEDS, JW
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (35): : 6477 - 6492
[5] P-TYPE CONDUCTION IN ZNSE GROWN BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE
NISHIZAWA, J
SUZUKI, R
OKUNO, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 2256 - 2258
[6] NITROGEN DOPED P-TYPE ZNSE LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
OHKI, A
SHIBATA, N
ZEMBUTSU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (05): : L909 - L912
[7] STABILITY AND INTERDIFFUSION AT MOCVD GROWN ZNSE/GAAS INTERFACES
OHMI, K
SUEMUNE, I
KANDA, T
KAN, Y
YAMANISHI, M
NISHIYAMA, F
HASAI, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 467 - 470
[8] LATTICE-MISMATCH ENHANCED DIFFUSION AT A ZNSE/GAAS INTERFACE - INCREASE OF THERMAL-STABILITY IN A LATTICE-MATCHING SYSTEM
OHMI, K
SUEMUNE, I
KANDA, T
KAN, Y
YAMANISHI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12): : L2072 - L2075
[9] PHOTOLUMINESCENCE DUE TO LATTICE-MISMATCH DEFECTS IN HIGH-PURITY ZNSE LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
SHIBATA, N
OHKI, A
ZEMBUTSU, S
KATSUI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (03): : L441 - L443
[10] METALORGANIC VAPOR-PHASE EPITAXY OF LOW-RESISTIVITY P-TYPE ZNSE
YASUDA, T
MITSUISHI, I
KUKIMOTO, H
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (01) : 57 - 59

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