P-TYPE CONDUCTION IN ZNSE GROWN BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE

被引：65

作者：

NISHIZAWA, J ^{[1
]}

SUZUKI, R ^{[1
]}

OKUNO, Y ^{[1
]}

机构：

[1] SEMICOND RES INST,SENDAI 980,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.336372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2256 / 2258

页数：3

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[9] NEARLY PERFECT CRYSTAL-GROWTH OF III-V COMPOUNDS BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE [J].

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