BLUE-LIGHT EMISSION FROM ZNSE P-N-JUNCTIONS

[1] GROWTH OF SEMICONDUCTOR CRYSTALS FROM SOLUTION USING TWIN-PLANE REENTRANT-EDGE MECHANISM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) : 1407 - &

[2] FISHER AG, 1958, Z NATURFORSCH A, V13, P105

[3] SYNTHESIS AND GROWTH OF ZNS ZNSE ZNTE GAS GA2SE3 AND INS CRYSTALS IN GA AND IN MELTS [J]. MATERIALS RESEARCH BULLETIN, 1968, 3 (06) : 483 - &

[4] NEW METHOD OF GROWING GAP CRYSTALS FOR LIGHT-EMITTING DIODES [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 884 - 890

[5] PROPERTIES OF SN-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1638 - 1645

[6] Nishizawa J., 1980, Semiconductor optoelectronics, P101

[7] NEARLY PERFECT CRYSTAL-GROWTH OF III-V COMPOUNDS BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 215 - 222

[8] NISHIZAWA J, 1982, INT SCH DEFECT COMPL

[9] NISHIZAWA J, 1983, OPTO MAT DEV, P27

[10] NISHIZAWA J, 1961, SEMICONDUCTOR DEVICE, P110

[1] GROWTH OF SEMICONDUCTOR CRYSTALS FROM SOLUTION USING TWIN-PLANE REENTRANT-EDGE MECHANISM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) : 1407 - &

[2] FISHER AG, 1958, Z NATURFORSCH A, V13, P105

[3] SYNTHESIS AND GROWTH OF ZNS ZNSE ZNTE GAS GA2SE3 AND INS CRYSTALS IN GA AND IN MELTS [J]. MATERIALS RESEARCH BULLETIN, 1968, 3 (06) : 483 - &

[4] NEW METHOD OF GROWING GAP CRYSTALS FOR LIGHT-EMITTING DIODES [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 884 - 890

[5] PROPERTIES OF SN-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1638 - 1645

[6] Nishizawa J., 1980, Semiconductor optoelectronics, P101

[7] NEARLY PERFECT CRYSTAL-GROWTH OF III-V COMPOUNDS BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 215 - 222

[8] NISHIZAWA J, 1982, INT SCH DEFECT COMPL

[9] NISHIZAWA J, 1983, OPTO MAT DEV, P27

[10] NISHIZAWA J, 1961, SEMICONDUCTOR DEVICE, P110