NITROGEN DOPED P-TYPE ZNSE LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：76

作者：

OHKI, A ^{[1
]}

SHIBATA, N ^{[1
]}

ZEMBUTSU, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL CORP,OPTOELECTR LABS,TOKAI,IBARAKI 31911,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 05期

关键词：

D O I：

10.1143/JJAP.27.L909

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L909 / L912

页数：4

共 9 条

[1] COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS
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[2] KAWAKYU Y, 1987, 19TH C SOL STAT DEV, P259
[3] PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LOW-ENERGY ION DOPING
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[4] P-TYPE CONDUCTION IN ZNSE GROWN BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE
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OKUNO, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 2256 - 2258
[5] PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
PARK, RM
MAR, HA
SALANSKY, NM
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 1047 - 1049
[6] HIGH-QUALITY ZNSE FILM GROWTH BY 0.1-ATM MOVPE UNDER THE DIETHYLZINC DIFFUSION-LIMITED CONDITION
SHIBATA, N
OHKI, A
ZEMBUTSU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (08): : 1305 - 1309
[7] GROWTH AND DOPING OF ZNSE AND ZNSXSE1-X BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION
STUTIUS, W
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 1 - 9
[8] CHARACTERIZATION OF ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
YAO, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 31 - 40
[9] METALORGANIC VAPOR-PHASE EPITAXY OF LOW-RESISTIVITY P-TYPE ZNSE
YASUDA, T
MITSUISHI, I
KUKIMOTO, H
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (01) : 57 - 59

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