CHARACTERIZATION OF ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

被引：115

作者：

YAO, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(85)90114-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：31 / 40

页数：10

相关论文

共 18 条

[1] CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE
AVEN, M
SEGALL, B
[J]. PHYSICAL REVIEW, 1963, 130 (01): : 81 - +
[2] THE OPTOELECTRONIC PROPERTIES OF DONORS IN ORGANO-METALLIC GROWN ZINC SELENIDE
DEAN, PJ
PITT, AD
WRIGHT, PJ
YOUNG, ML
COCKAYNE, B
[J]. PHYSICA B & C, 1983, 116 (1-3): : 508 - 513
[3] HOPFIELD JJ, 1964, 7TH P INT C PHYS SEM, P725
[4] OPTICAL PROPERTIES OF SUBSTITUTIONAL DONORS IN ZNSE
MERZ, JL
SHIEVER, JW
NASSAU, K
KUKIMOTO, H
[J]. PHYSICAL REVIEW B, 1972, 6 (02): : 545 - &
[5] MOTT NF, 1971, ELECTRONIC PROCESSES
[6] EXCITON-DONOR COMPLEXES IN SEMICONDUCTORS
SHARMA, RR
RODRIGUEZ, S
[J]. PHYSICAL REVIEW, 1967, 159 (03): : 649 - +
[7] CONDUCTION MECHANISM IN LOW-RESISTIVITY N-TYPE ZNSE PREPARED BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION
STUTIUS, W
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 284 - 291
[8] EFFECT OF SE VAPOR-PRESSURE AND THERMAL-DISSOCIATION PROCESS ON EXCITONIC-EMISSION LINES IN MOLECULAR-BEAM EPITAXIALLY GROWN HIGH-PURITY ZINC SELENIDE
TAGUCHI, T
YAO, T
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 3002 - 3005
[9] DONOR-ACCEPTOR PAIRS IN SEMICONDUCTORS
WILLIAMS, F
[J]. PHYSICA STATUS SOLIDI, 1968, 25 (02): : 493 - &
[10] ANOMALOUS MOBILITY BEHAVIOR IN CDS AND CDTE - ELECTRICAL EVIDENCE FOR IMPURITY PAIRS
WOODBURY, HH
[J]. PHYSICAL REVIEW B, 1974, 9 (12): : 5188 - 5194