ANOMALOUS MOBILITY BEHAVIOR IN CDS AND CDTE - ELECTRICAL EVIDENCE FOR IMPURITY PAIRS

被引：34

作者：

WOODBURY, HH ^{[1
]}

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.9.5188

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5188 / 5194

页数：7

共 25 条

[1] HIGH ELECTRON MOBILITY IN ZINC SELENIDE THROUGH LOW-TEMPERATURE ANNEALING
AVEN, M
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1204 - &
[2] HALL DRIFT MOBILITIES - THEIR RATIO AND TEMPERATURE DEPENDENCE IN SEMICONDUCTORS
BLATT, FJ
[J]. PHYSICAL REVIEW, 1957, 105 (04): : 1203 - 1205
[3] THEORY OF DIPOLE SCATTERING IN SEMICONDUCTORS
BOARDMAN, AD
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 85 (543P): : 141 - &
[4] DEVLIN SS, 1967, PHYSICS CHEMISTRY II, pCH11
[5] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS
ERGINSOY, C
[J]. PHYSICAL REVIEW, 1950, 79 (06): : 1013 - 1014
[6] HALL EFFECT OF PHOTOELECTRONS IN CADMIUM SULFIDE
FUJITA, H
KOBAYASHI, K
KAWAI, T
SHIGA, K
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (01) : 109 - +
[7] BAND EDGE EMISSION PROPERTIES OF CDTE
HALSTED, RE
LORENZ, MR
SEGALL, B
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 : 109 - 116
[8] HALSTED RE, 1967, PHYSICS CHEMISTRY 2
[9] Hershman GH, 1970, J SOLID STATE CHEM, V2, P483, DOI 10.1016/0022-4596(70)90042-3
[10] THE THEORY OF ELECTRONIC CONDUCTION IN POLAR SEMI-CONDUCTORS
HOWARTH, DJ
SONDHEIMER, EH
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1953, 219 (1136): : 53 - 74